♦I-Alumina (Al)2O3)
Izingxenye ze-ceramic ezinembile ezikhiqizwe yi-ZhongHui Intelligent Manufacturing Group (ZHHIMG) zingenziwa ngezinto zokusetshenziswa ze-ceramic ezihlanzekile kakhulu, i-alumina engu-92~97%, i-alumina engu-99.5%, i-alumina engu->99.9%, kanye nokucindezela kwe-CIP cold isostatic. Ukushisa okuphezulu kanye nomshini wokulungisa ngokunemba, ukunemba kobukhulu obungu-± 0.001mm, ubushelelezi obufika ku-Ra0.1, sebenzisa izinga lokushisa elifika ku-1600 degrees. Imibala ehlukene ye-ceramic ingenziwa ngokwezidingo zamakhasimende, njenge: omnyama, omhlophe, o-beige, obomvu omnyama, njll. Izingxenye ze-ceramic ezinembile ezikhiqizwe yinkampani yethu ziyamelana nokushisa okuphezulu, ukugqwala, ukuguguleka kanye nokushisa, futhi zingasetshenziswa isikhathi eside endaweni yegesi eshisayo, i-vacuum kanye negesi ebolile.
Isetshenziswa kabanzi emishinini ehlukahlukene yokukhiqiza ye-semiconductor: Amafreyimu (i-ceramic bracket), i-Substrate (isisekelo), i-Arm/Bridge (i-manipulator), i-Mechanical Components kanye ne-Ceramic Air Bearing.
| Igama Lomkhiqizo | Ishubhu/Ipayipi/Induku ye-Ceramic yesikwele se-Alumina Ceramic ehlanzekile kakhulu engu-99 | |||||
| Inkomba | Iyunithi | 85% Al2O3 | 95% Al2O3 | 99% Al2O3 | 99.5 % Al2O3 | |
| Ubuningi | g/cm3 | 3.3 | 3.65 | 3.8 | 3.9 | |
| Ukumuncwa Kwamanzi | % | <0.1 | <0.1 | 0 | 0 | |
| Izinga Lokushisa Elihlanganisiwe | ℃ | 1620 | 1650 | 1800 | 1800 | |
| Ubulukhuni | AmaMoh | 7 | 9 | 9 | 9 | |
| Amandla Okugoba (20℃)) | I-Mpa | 200 | 300 | 340 | 360 | |
| Amandla Okucindezela | I-Kgf/cm2 | 10000 | 25000 | 30000 | 30000 | |
| Izinga Lokushisa Elisebenza Isikhathi Eside | ℃ | 1350 | 1400 | 1600 | 1650 | |
| Izinga Lokushisa Eliphezulu Lokusebenza | ℃ | 1450 | 1600 | 1800 | 1800 | |
| Ukumelana Nomthamo | 20℃ | Ω. cm3 | >1013 | >1013 | >1013 | >1013 |
| 100℃ | 1012-1013 | 1012-1013 | 1012-1013 | 1012-1013 | ||
| 300℃ | >109 | >1010 | >1012 | >1012 | ||
Ukusetshenziswa kobumba be-alumina obumsulwa obuphezulu:
1. Isetshenziswa emishinini ye-semiconductor: i-ceramic vacuum chuck, i-cutting disc, i-cleaning disc, i-ceramic CHUCK.
2. Izingxenye zokudlulisa i-wafer: ama-chuck okuphatha i-wafer, ama-disc okusika i-wafer, ama-disc okuhlanza i-wafer, izinkomishi zokumunca ze-wafer optical.
3. Imboni yokubonisa iphaneli eyisicaba ye-LED / LCD: umlomo wobumba, idiski yokugaya ye-ceramic, i-LIFT PIN, i-PIN rail.
4. Ukuxhumana okubonakalayo, imboni yelanga: amashubhu e-ceramic, izinduku ze-ceramic, izikrufu ze-ceramic zokunyathelisa isikrini sebhodi lesifunda.
5. Izingxenye ezingamelani nokushisa futhi ezivikela ngogesi: amabheringi e-ceramic.
Njengamanje, i-aluminium oxide ceramics ingahlukaniswa ibe ubumsulwa obuphezulu kanye ne-common ceramics. Uchungechunge lwe-aluminium oxide ceramics oluhlanzekile kakhulu lubhekisela ezintweni ze-ceramic eziqukethe okungaphezu kuka-99.9% Al₂O₃. Ngenxa yokushisa kwayo okushisayo okufika ku-1650 - 1990°C kanye nobude bayo bokudlulisa obungu-1 ~ 6μm, ivame ukucutshungulwa ibe yingilazi ehlanganisiwe esikhundleni se-platinum crucible: engasetshenziswa njenge-sodium tube ngenxa yokudlulisa kwayo ukukhanya kanye nokumelana nokugqwala kwensimbi ye-alkali. Embonini ye-elekthronikhi, ingasetshenziswa njengento yokuvikela imvamisa ephezulu ye-IC substrates. Ngokusho kokuqukethwe okuhlukile kwe-aluminium oxide, uchungechunge lwe-common aluminium oxide ceramic lungahlukaniswa lube yi-ceramics ezingu-99, i-ceramics ezingu-95, i-ceramics ezingu-90 kanye ne-ceramics ezingu-85. Ngezinye izikhathi, i-ceramics ene-80% noma i-75% ye-aluminium oxide nayo ihlukaniswa njengochungechunge lwe-common aluminium oxide ceramic. Phakathi kwazo, izinto ze-ceramic ze-aluminium oxide ezingu-99 zisetshenziselwa ukukhiqiza ishubhu lesithando esishisayo nesivikela umlilo kanye nezinto ezikhethekile ezingagugi, njengezinsimbi ze-ceramic, izivalo ze-ceramic kanye nama-valve plate. Izivalo ze-aluminium ezingu-95 zisetshenziswa kakhulu njengengxenye evikela ukuguguleka engagugi. Izivalo ze-ceramic ezingu-85 zivame ukuhlanganiswa kwezinye izakhiwo, ngaleyo ndlela zithuthukise ukusebenza kukagesi kanye namandla omshini. Ingasebenzisa i-molybdenum, i-niobium, i-tantalum nezinye izivalo zensimbi, kanti ezinye zisetshenziswa njengamadivayisi kagesi okuhlanza.
| Into Esezingeni Eliphezulu (Inani Elimele) | Igama Lomkhiqizo | I-AES-12 | I-AES-11 | I-AES-11C | I-AES-11F | I-AES-22S | I-AES-23 | AL-31-03 | |
| Ukwakheka Kwamakhemikhali Umkhiqizo Wokuthulula Okulula Okungena-Sodium Ephansi | H₂O | % | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 |
| I-LOl | % | 0.1 | 0.2 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | |
| Fe₂0₃ | % | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | |
| I-SiO₂ | % | 0.03 | 0.03 | 0.03 | 0.03 | 0.02 | 0.04 | 0.04 | |
| I-Na₂O | % | 0.04 | 0.04 | 0.04 | 0.04 | 0.02 | 0.04 | 0.03 | |
| I-MgO* | % | - | 0.11 | 0.05 | 0.05 | - | - | - | |
| I-Al₂0₃ | % | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | |
| Ububanzi Bezinhlayiyana Eziphakathi (MT-3300, indlela yokuhlaziya nge-laser) | μm | 0.44 | 0.43 | 0.39 | 0.47 | 1.1 | 2.2 | 3 | |
| Usayizi wekristalu we-α | μm | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 ~ 1.0 | 0.3 ~ 4 | 0.3 ~ 4 | |
| Ubuningi Bokwakha** | g/cm³ | 2.22 | 2.22 | 2.2 | 2.17 | 2.35 | 2.57 | 2.56 | |
| Ubuningi be-Sintering** | g/cm³ | 3.88 | 3.93 | 3.94 | 3.93 | 3.88 | 3.77 | 3.22 | |
| Izinga Lokuncipha Lomugqa Wokucwebezela** | % | 17 | 17 | 18 | 18 | 15 | 12 | 7 | |
* I-MgO ayifakiwe ekubalweni kobumsulwa be-Al₂O₃.
* Ayikho i-scaling powder engu-29.4MPa (300kg/cm²), izinga lokushisa lokusila lingu-1600°C.
I-AES-11 / 11C / 11F: Engeza u-0.05 ~ 0.1% MgO, ukukwazi ukuhlangana kahle kuhle kakhulu, ngakho-ke kusebenza kuma-ceramics e-aluminium oxide ahlanzekile angaphezu kuka-99%.
I-AES-22S: Ibonakala ngobuningi bokwakha kanye nesilinganiso esiphansi sokuncipha komugqa wokusinta, iyasebenza ekubunjweni kwefomu elishelelayo kanye neminye imikhiqizo emikhulu enokunemba okudingekile kobukhulu.
I-AES-23 / AES-31-03: Inobukhulu bokwakheka obuphezulu, i-thixotropy kanye ne-viscosity ephansi kune-AES-22S. Eyokuqala isetshenziswa ezintweni zobumba kanti eyesibili isetshenziswa njengesinciphisi samanzi ezintweni zokuvimbela umlilo, okwenza ithandwe kakhulu.
♦Izimpawu ze-Silicon Carbide (SiC)
| Izici Ezijwayelekile | Ukuhlanzeka kwezingxenye eziyinhloko (wt%) | 97 | |
| Umbala | Okumnyama | ||
| Ubuningi (g/cm³) | 3.1 | ||
| Ukumuncwa kwamanzi (%) | 0 | ||
| Izici Zemishini | Amandla okuguquguquka (i-MPa) | 400 | |
| I-modulus encane (i-GPa) | 400 | ||
| Ubulukhuni be-Vickers (GPa) | 20 | ||
| Izici Zokushisa | Izinga lokushisa eliphezulu lokusebenza (°C) | 1600 | |
| I-coefficient yokwandisa ukushisa | RT~500°C | 3.9 | |
| (1/°C x 10-6) | RT~800°C | 4.3 | |
| Ukuqhuba kwe-thermal (W/mx K) | 130 110 | ||
| Ukumelana nokushaqeka kokushisa ΔT (°C) | 300 | ||
| Izici Zikagesi | Ukumelana nevolumu | 25°C | 3 x 106 |
| 300°C | - | ||
| 500°C | - | ||
| 800°C | - | ||
| I-dielectric constant | 10GHz | - | |
| Ukulahleka kwe-dielectric (x 10-4) | - | ||
| I-Q Factor (x 104) | - | ||
| I-voltage yokuqhekeka kwe-dielectric (KV/mm) | - | ||
♦I-Silicon Nitride Ceramic
| Izinto | Iyunithi | Si₃N₄ |
| Indlela Yokuhlanza | - | Ukucindezela Kwegesi Okuhlanganisiwe |
| Ubuningi | g/cm³ | 3.22 |
| Umbala | - | Okumpunga Okumnyama |
| Izinga Lokumuncwa Kwamanzi | % | 0 |
| I-Modulus Encane | I-Gpa | 290 |
| Ukuqina kukaVickers | I-Gpa | 18 - 20 |
| Amandla Okucindezela | I-Mpa | 2200 |
| Amandla Okugoba | I-Mpa | 650 |
| Ukuqhuba Okushisayo | I-W/mK | 25 |
| Ukumelana Nokushaqeka Okushisayo | Δ (°C) | 450 - 650 |
| Izinga Lokushisa Eliphezulu Lokusebenza | °C | 1200 |
| Ukumelana Nomthamo | Ω·cm | > 10 ^ 14 |
| I-Dielectric Constant | - | 8.2 |
| Amandla e-Dielectric | kV/mm | 16 |