Enqubweni yokukhiqiza ye-semiconductor enembile neyinkimbinkimbi yokupakisha i-wafer, ukucindezeleka kokushisa kufana "nombhubhisi" ofihliwe ebumnyameni, ohlala usongela ikhwalithi yokupakisha kanye nokusebenza kwama-chips. Kusukela ekwehlukeni kwama-coefficients okwandisa ukushisa phakathi kwama-chips nezinto zokupakisha kuya ekushintsheni okukhulu kokushisa ngesikhathi senqubo yokupakisha, izindlela zokukhiqiza ukucindezeleka kokushisa ziyahlukahluka, kodwa konke kukhomba emphumeleni wokunciphisa izinga lokukhiqiza kanye nokuthinta ukuthembeka kwesikhathi eside kwama-chips. Isisekelo se-granite, esinezakhiwo zaso ezihlukile zezinto, siphenduka buthule "umsizi" onamandla ekubhekaneni nenkinga yokucindezeleka kokushisa.
Inkinga yokucindezeleka kokushisa ekupakishweni kwe-wafer
Ukupakishwa kwe-wafer kuhilela umsebenzi wokubambisana wezinto eziningi. Ama-chips ngokuvamile akhiwa ngezinto ze-semiconductor ezifana ne-silicon, kuyilapho izinto zokupakisha ezifana nezinto zokupakisha zepulasitiki kanye ne-substrates zihluka ngekhwalithi. Lapho izinga lokushisa lishintsha ngesikhathi senqubo yokupakisha, izinto ezahlukene ziyahlukahluka kakhulu ngezinga lokwanda kokushisa kanye nokuncishiswa ngenxa yomehluko omkhulu ku-coefficient of thermal expansion (CTE). Isibonelo, i-coefficient of thermal expansion yama-chips e-silicon cishe ingu-2.6×10⁻⁶/℃, kuyilapho i-coefficient of thermal expansion yezinto ezivamile zokubumba i-epoxy resin iphakeme njengo-15-20 ×10⁻⁶/℃. Leli gebe elikhulu libangela ukuthi izinga lokuncipha kwe-chip kanye nezinto zokupakisha zibe yi-asynchronous ngesikhathi sokupholisa ngemva kokupakisha, okudala ukucindezeleka okukhulu kokushisa endaweni yokuxhumana phakathi kwalezi ezimbili. Ngaphansi komphumela oqhubekayo wokucindezeleka kokushisa, i-wafer ingagoba futhi iguquguquke. Ezimweni ezimbi kakhulu, ingabangela ngisho nokukhubazeka okubulalayo njengokuqhekeka kwe-chip, ukuqhekeka kwamalunga e-solder, kanye nokwahlukana kwe-interface, okuholela ekulimaleni kokusebenza kukagesi kwe-chip kanye nokuncipha okukhulu empilweni yayo yesevisi. Ngokwezibalo zemboni, izinga lokungasebenzi kahle kokupakisha i-wafer okubangelwa izinkinga zokucindezeleka kokushisa lingafinyelela ku-10% kuya ku-15%, okube yisici esibalulekile esivimbela intuthuko ephumelelayo nekhwalithi ephezulu yemboni ye-semiconductor.
Izinzuzo eziphawulekayo zezisekelo ze-granite
I-coefficient ephansi yokwanda kokushisa: I-Granite yakhiwe kakhulu ngamakristalu amaminerali njenge-quartz ne-feldspar, futhi i-coefficient yayo yokwanda kokushisa iphansi kakhulu, ngokuvamile isukela ku-0.6 kuya ku-5×10⁻⁶/℃, esondele kakhulu kuneye-silicon chips. Lesi sici senza ukuthi ngesikhathi sokusebenza kwemishini yokupakisha i-wafer, ngisho nalapho kuhlangatshezwana nokushintshashintsha kwezinga lokushisa, umehluko wokwanda kokushisa phakathi kwesisekelo se-granite kanye ne-chip nezinto zokupakisha wehliswe kakhulu. Isibonelo, lapho izinga lokushisa lishintsha ngo-10℃, ukushintshashintsha kosayizi wepulatifomu yokupakisha eyakhelwe esisekelweni se-granite kungancishiswa ngaphezu kuka-80% uma kuqhathaniswa nesisekelo sensimbi sendabuko, okunciphisa kakhulu ukucindezeleka kokushisa okubangelwa ukwanda kokushisa okungavumelani kanye nokufinyela, futhi kunikeze indawo yokusekela ezinzile kakhulu ye-wafer.
Ukuqina kokushisa okuhle kakhulu: I-Granite inokuqina kokushisa okuvelele. Isakhiwo sayo sangaphakathi siminyene, futhi amakristalu ahlanganiswe eduze ngezibopho ze-ionic neze-covalent, okuvumela ukuqhutshwa kokushisa okuhamba kancane ngaphakathi. Lapho imishini yokupakisha idlula emijikelezweni yokushisa eyinkimbinkimbi, isisekelo se-granite singacindezela ngempumelelo ithonya lokushintsha kokushisa kuyo futhi sigcine insimu yokushisa ezinzile. Ukuhlolwa okufanele kubonisa ukuthi ngaphansi kwesilinganiso sokushintsha kokushisa esivamile semishini yokupakisha (njenge-±5℃ ngomzuzu), ukuphambuka kokufana kokushisa kobuso kwesisekelo se-granite kungalawulwa ngaphakathi kwe-±0.1℃, kugwenywe isimo sokugcwala kokucindezeleka kokushisa okubangelwa umehluko wokushisa wendawo, kuqinisekiswe ukuthi i-wafer isendaweni yokushisa efanayo futhi ezinzile kuyo yonke inqubo yokupakisha, futhi kuncishiswe umthombo wokukhiqizwa kokucindezeleka kokushisa.
Ukuqina okuphezulu kanye nokudambisa ukudlidliza: Ngesikhathi sokusebenza kwemishini yokupakisha i-wafer, izingxenye ezihambayo zemishini ngaphakathi (njengezinjini, amadivayisi okudlulisa, njll.) zizokhiqiza ukudlidliza. Uma lokhu kudlidliza kudluliselwa ku-wafer, kuzokhulisa umonakalo obangelwa ukucindezeleka kokushisa ku-wafer. Izisekelo ze-granite zinokuqina okuphezulu kanye nokuqina okuphezulu kunokwezinto eziningi zensimbi, ezingamelana ngempumelelo nokuphazamiseka kokudlidliza kwangaphandle. Okwamanje, isakhiwo salo sangaphakathi esiyingqayizivele sisinika ukusebenza okuhle kakhulu kokudlidliza futhi sikwenze sikwazi ukuqeda amandla okudlidliza ngokushesha. Idatha yocwaningo ikhombisa ukuthi isisekelo se-granite singanciphisa ukudlidliza okuphezulu (100-1000Hz) okubangelwa ukusebenza kwemishini yokupakisha ngo-60% kuya ku-80%, kunciphisa kakhulu umphumela wokuhlanganisa wokudlidliza kanye nokucindezeleka kokushisa, futhi kuqinisekiswe ukunemba okuphezulu kanye nokuthembeka okuphezulu kokupakisha i-wafer.
Umphumela wokusebenza osebenzayo
Emugqeni wokukhiqiza amaphakheji e-wafer webhizinisi elidumile lokukhiqiza ama-semiconductor, ngemuva kokwethula imishini yokupakisha enezisekelo ze-granite, kwenziwe impumelelo emangalisayo. Ngokusekelwe ekuhlaziyweni kwedatha yokuhlola yama-wafer ayi-10,000 ngemva kokupakisha, ngaphambi kokwamukela isisekelo se-granite, izinga lokukhubazeka kokugoba kwe-wafer okubangelwa ukucindezeleka kokushisa lalingu-12%. Kodwa-ke, ngemva kokushintshela esisekelweni se-granite, izinga lokukhubazeka lehle kakhulu laya ngaphakathi kuka-3%, futhi izinga lokukhiqiza lathuthuka kakhulu. Ngaphezu kwalokho, ukuhlolwa kokuthembeka kwesikhathi eside kubonise ukuthi ngemva kwemijikelezo eyi-1,000 yokushisa okuphezulu (125℃) kanye nokushisa okuphansi (-55℃), inani lokwehluleka kwe-solder joint ye-chip ngokusekelwe ephaketheni lesisekelo se-granite lincishisiwe ngo-70% uma kuqhathaniswa nephakheji lesisekelo lendabuko, futhi ukuzinza kokusebenza kwe-chip kuthuthukiswe kakhulu.
Njengoba ubuchwepheshe be-semiconductor buqhubeka nokuthuthuka buqonde ekuqondeni okuphezulu kanye nosayizi omncane, izidingo zokulawula ukucindezeleka kokushisa ekupakisheni kwe-wafer ziya ngokuya ziba nzima kakhulu. Izisekelo ze-granite, ngezinzuzo zazo eziphelele ekukhuleni kwe-thermal okuphansi, ukuzinza kokushisa kanye nokunciphisa ukudlidliza, sezibe yisinqumo esibalulekile sokuthuthukisa ikhwalithi yokupakisha kwe-wafer kanye nokunciphisa umthelela wokucindezeleka kokushisa. Zidlala indima ebaluleke kakhulu ekuqinisekiseni intuthuko esimeme yemboni ye-semiconductor.
Isikhathi sokuthunyelwe: Meyi-15-2025