Enqubweni yokukhiqiza enembile neyinkimbinkimbi ye-semiconductor yokupakishwa kwe-wafer, ukucindezeleka okushisayo kufana "nombhubhisi" ofihliwe ebumnyameni, ohlale esongela ikhwalithi yokupakisha nokusebenza kwama-chips. Kusukela kumehluko kuma-coefficients wokunweba okushisayo phakathi kwama-chips nezinto zokupakisha kuya ekushintsheni okukhulu kwezinga lokushisa phakathi nenqubo yokupakisha, izindlela zokukhiqiza zokucindezeleka okushisayo zihlukahlukene, kodwa zonke zikhomba umphumela wokunciphisa izinga lokukhiqiza kanye nokuthinta ukwethembeka kwesikhathi eside kwama-chips. Isisekelo se-granite, esinezici zayo ezibonakalayo eziyingqayizivele, buthule buba "umsizi" onamandla ekubhekaneni nenkinga yokucindezeleka okushisayo.
Inkinga yengcindezi eshisayo ekufakweni kwe-wafer
Ukupakishwa kwe-wafer kufaka phakathi umsebenzi wokubambisana wezinto eziningi. Ama-chips ngokuvamile akhiwe ngezinto ze-semiconductor ezifana ne-silicon, kuyilapho izinto zokupakisha njengezinto zokupakisha zepulasitiki nama-substrates ahluka ngekhwalithi. Uma izinga lokushisa lishintsha phakathi nenqubo yokupakisha, izinto ezihlukene ziyahlukahluka ngezinga lokunwetshwa kwe-thermal kanye nokufinyela ngenxa yomehluko omkhulu ku-coefficient of thermal expansion (CTE). Isibonelo, i-coefficient yokunwetshwa okushisayo kwama-silicon chips cishe i-2.6×10⁻⁶/℃, kuyilapho i-coefficient yokunwetshwa okushisayo kwezinto ezijwayelekile zokubumba i-epoxy resin iphezulu njengo-15-20 ×10⁻⁶/℃. Lesi sikhala esikhulu sibangela idigri yokuncipha kwe-chip nokokupakisha ukuthi kungavumelani ngesikhathi sesigaba sokupholisa ngemva kokupakisha, okudala ukucindezelwa okushisayo okuqinile kusixhumi esibonakalayo phakathi kwakho kokubili. Ngaphansi komphumela oqhubekayo wokucindezeleka okushisayo, i-wafer ingase igoqe futhi ikhubaze. Ezimweni ezimbi kakhulu, kungase kubangele ngisho nokulimala okubulalayo njengokuqhekeka kwe-chip, ukuphuka kwamalunga e-solder, nokuncipha kwe-interface, okuholela ekulimaleni kokusebenza kukagesi kwe-chip kanye nokuncipha okukhulu kwempilo yayo yesevisi. Ngokwezibalo zomkhakha, izinga elingasebenzi kahle lokupakishwa kwe-wafer elibangelwa izinkinga zengcindezi yokushisa lingaba phezulu ukusuka ku-10% ukuya ku-15%, libe yisici esibalulekile esikhawulela ukuthuthukiswa okusebenzayo kanye nekhwalithi ephezulu yemboni ye-semiconductor.
Izinzuzo zesici sezisekelo ze-granite
I-coefficient ephansi yokwandisa okushisayo: I-Granite ikakhulukazi yakhiwe amakristalu amaminerali afana ne-quartz ne-feldspar, futhi i-coefficient yayo yokwandisa okushisayo iphansi kakhulu, ngokuvamile isukela ku-0.6 kuya ku-5×10⁻⁶/℃, eseduze naleyo yama-silicon chips. Lesi sici senza ukuthi ngesikhathi sokusebenza kwemishini yokupakisha eyilucwecwana, ngisho nalapho uhlangabezana nokushintshashintsha kwezinga lokushisa, umehluko ekwandeni okushisayo phakathi kwesisekelo segwadle kanye ne-chip nezinto zokupakisha wehliswa kakhulu. Isibonelo, lapho izinga lokushisa lishintsha ngo-10 ℃, ukuhluka kosayizi weplathifomu yokupakisha eyakhelwe phezu kwesisekelo segwadle kungancishiswa ngaphezu kuka-80% uma kuqhathaniswa nesisekelo sensimbi esivamile, esidambisa kakhulu ingcindezi yokushisa ebangelwa ukunwetshwa nokufinyela okushisayo kwe-asynchronous, futhi inikeza indawo yokusekelwa ezinzile yewafa.
Ukuzinza okuhle kakhulu kwe-thermal: I-Granite inokusimama okushisayo okuvelele. Isakhiwo sayo sangaphakathi siminyene, futhi amakristalu ahlanganiswe eduze ngebhondi ye-ionic ne-covalent, okuvumela ukuqhutshwa kokushisa okunensayo ngaphakathi. Lapho imishini yokupakisha idlula imijikelezo yokushisa eyinkimbinkimbi, isisekelo se-granite singacindezela ngempumelelo umthelela wokushintsha kwezinga lokushisa ngokwalo futhi sigcine inkambu yokushisa ezinzile. Ukuhlola okufanelekile kubonisa ukuthi ngaphansi kwezinga lokushisa elivamile lokushintsha kwezisetshenziswa zokupakisha (ezifana no-±5℃ ngomzuzu), ukuchezuka kokufana kwezinga lokushisa okungaphezulu kwesisekelo segwadle kungalawuleka phakathi kuka-±0.1℃, kugwenywe into yokugxilisa ingqondo eshisayo ebangelwa ukuhluka kwezinga lokushisa lendawo, iqinisekise ukuthi iwafa isesimweni esivumelanayo kanye nenqubo yokupakisha yomthombo futhi izinzile phakathi kwe-pack. isizukulwane sokucindezeleka.
Ukuqina okuphezulu nokuncibilika kokudlidliza: Ngesikhathi sokusebenza kwempahla yokupakisha eyilucwecwana, izingxenye ezinyakazayo ezisebenza ngaphakathi (njengamamotho, amadivaysi okudlulisa, njll.) zizokhiqiza ukudlidliza. Uma lokhu kudlidliza kudluliselwa ku-wafer, kuzoqinisa umonakalo obangelwa ukucindezeleka okushisayo ku-wafer. Izisekelo ze-Granite zinokuqina okuphezulu kanye nobulukhuni obuphakeme kunabo bezinto eziningi zensimbi, ezingamelana ngokuphumelelayo nokuphazanyiswa kokudlidliza kwangaphandle. Ngaleso sikhathi, ukwakheka kwayo kwangaphakathi okuhlukile kuyinikeza ukusebenza okuhle kakhulu kokudlidliza futhi kuyenze ikwazi ukuhlakaza amandla okudlidliza ngokushesha. Idatha yocwaningo ibonisa ukuthi isisekelo se-granite singanciphisa ukudlidliza kwe-high-frequency (100-1000Hz) okukhiqizwa ukusebenza kwempahla yokupakisha ngo-60% kuya ku-80%, kunciphisa kakhulu umphumela wokuhlanganisa wokudlidliza nokucindezeleka okushisayo, kanye nokuqinisekisa ukunemba okuphezulu nokuthembeka okuphezulu kokupakishwa kwe-wafer.
Umphumela wohlelo lokusebenza olusebenzayo
Emgqeni wokukhiqiza wokupakisha we-wafer webhizinisi elaziwayo lokukhiqiza i-semiconductor, ngemuva kokwethula imishini yokupakisha enezisekelo ze-granite, izimpumelelo ezimangalisayo zenziwe. Ngokusekelwe ekuhlaziyweni kwedatha yokuhlola yama-wafer angu-10,000 ngemva kokupakishwa, ngaphambi kokwamukela isisekelo se-granite, izinga lokungasebenzi kahle kwe-wafer warping elibangelwa ukucindezeleka okushisayo lalingu-12%. Kodwa-ke, ngemva kokushintshela kusisekelo se-granite, izinga lokukhubazeka lehle kakhulu laya ku-3%, futhi izinga lokukhiqiza laba ngcono kakhulu. Ngaphezu kwalokho, ukuhlolwa kokwethembeka kwesikhathi eside kubonise ukuthi ngemva kwemijikelezo engu-1,000 yokushisa okuphezulu (125 ℃) kanye nezinga lokushisa eliphansi (-55℃), inani lokwehluleka okuhlanganyelwe kwe-chip okusekelwe kuphakheji lesisekelo se-granite lehliswe ngo-70% uma liqhathaniswa nephakheji lesisekelo lendabuko, futhi ukuqina kokusebenza kwe-chip kuye kwaba ngcono kakhulu.
Njengoba ubuchwepheshe be-semiconductor buqhubeka buthuthukela ekunembeni okuphezulu kanye nosayizi omncane, izidingo zokulawula ingcindezi yokushisa emaphaketheni ama-wafer ziya ngokuya ziba lukhuni. Izisekelo ze-granite, nezinzuzo zazo ezibanzi ku-coefficient ephansi yokwandisa ukushisa okushisayo, ukuzinza kokushisa nokunciphisa ukudlidliza, zibe yisinqumo esibalulekile sokuthuthukisa ikhwalithi yokupakishwa kwe-wafer nokunciphisa umthelela wengcindezi yokushisa. Badlala indima ebaluleke kakhulu ekuqinisekiseni intuthuko esimeme yemboni ye-semiconductor.
Isikhathi sokuthumela: May-15-2025