Emkhakheni wokukhiqiza ama-semiconductor, ukunemba kuyindlela yokuphila yekhwalithi yomkhiqizo kanye nokusebenza kahle. Imishini yokulinganisa ama-semiconductor, njengesixhumanisi esibalulekile sokuqinisekisa ukunemba kokukhiqiza, ibeka izidingo eziqinile ekuzinzeni kwezingxenye zayo eziyinhloko. Phakathi kwazo, ipulatifomu ye-granite, enokuqina kwayo okuvelele kokushisa, idlala indima ebalulekile emishinini yokulinganisa ama-semiconductor. Lesi sihloko sizokwenza ukuhlaziywa okujulile kokusebenza kokuqina kokushisa kwamapulatifomu e-granite emishinini yokulinganisa ama-semiconductor ngedatha yangempela yokuhlola.
Izidingo eziqinile zokuzinza kokushisa kwemishini yokulinganisa ekukhiqizweni kwe-semiconductor
Inqubo yokukhiqiza i-semiconductor iyinkimbinkimbi kakhulu futhi inembile, futhi ububanzi bemigqa yesekethe ku-chip bungene ezingeni le-nanometer. Enqubweni enjalo yokukhiqiza enembile kakhulu, ngisho noshintsho oluncane kakhulu lokushisa lungabangela ukwanda kokushisa kanye nokuncipha kwezingxenye zemishini, ngaleyo ndlela kubangele amaphutha okulinganisa. Isibonelo, enqubweni ye-photolithography, uma ukunemba kokulinganisa kwemishini yokulinganisa kwehla nge-nanometer eyi-1, kungabangela izinkinga ezinkulu ezifana nezifunda ezimfushane noma izifunda ezivulekile kumasekethe ku-chip, okuholela ekukhuculweni kwe-chip. Ngokusho kwezibalo zedatha yemboni, kukho konke ukushintshashintsha kwezinga lokushisa okungu-1℃, ipulatifomu yemishini yokulinganisa yensimbi yendabuko ingase ibhekane nezinguquko zobukhulu bama-nanometer amaningana. Kodwa-ke, ukukhiqizwa kwe-semiconductor kudinga ukunemba kokulinganisa ukuthi kulawulwe ngaphakathi kwama-nanometer angu-±0.1, okwenza ukuzinza kokushisa kube yinto ebalulekile ekunqumeni ukuthi imishini yokulinganisa ingahlangabezana yini nezidingo zokukhiqiza i-semiconductor.

Izinzuzo zemfundiso yokuzinza kokushisa kwamapulatifomu e-granite
I-Granite, njengohlobo lwetshe lemvelo, inokwakheka okubumbene kwamaminerali angaphakathi, isakhiwo esiminyene nesifanayo, futhi inenzuzo yemvelo yokuzinza kokushisa. Ngokuphathelene ne-coefficient yokwanda kokushisa, i-coefficient yokwanda kokushisa kwe-granite iphansi kakhulu, ngokuvamile isukela ku-4.5 kuya ku-6.5×10⁻⁶/K. Ngokuphambene nalokho, i-coefficient yokwanda kokushisa kwezinto ezivamile zensimbi ezifana ne-aluminium alloys iphakeme njenge-23.8×10⁻⁶/K, okuphindwe kaningana kune-granite. Lokhu kusho ukuthi ngaphansi kwezimo ezifanayo zokushintshashintsha kokushisa, ushintsho lobukhulu beplatifomu ye-granite luncane kakhulu kunolweplatifomu yensimbi, olunganikeza ireferensi yokulinganisa ezinzile kakhulu yemishini yokulinganisa ye-semiconductor.
Ngaphezu kwalokho, isakhiwo sekristalu segranite sisinika ukufana okuhle kakhulu kokuqhuba ukushisa. Lapho ukusebenza kwemishini kukhiqiza ukushisa noma izinga lokushisa elizungezile lishintsha, ipulatifomu yegranite ingahambisa ukushisa ngokushesha nangokulinganayo, igweme ukushisa ngokweqile noma ukupholisa ngokweqile, ngaleyo ndlela igcine ngempumelelo ukuhambisana kwezinga lokushisa lepulatifomu futhi iqinisekise ukuzinza kokunemba kokulinganisa.
Inqubo kanye nendlela yokulinganisa ukuzinza kokushisa
Ukuze sihlole ngokunembile ukuzinza kokushisa kwepulatifomu ye-granite emishinini yokulinganisa i-semiconductor, siklame uhlelo lokulinganisa oluqinile. Khetha ithuluzi lokulinganisa i-wafer ye-semiconductor elinembile kakhulu, elifakwe ipulatifomu ye-granite ecutshungulwe kahle kakhulu. Endaweni yokuhlola, ububanzi bokuhlukahluka kwezinga lokushisa elivamile endaweni yokukhiqiza i-semiconductor belingisiwe, okungukuthi, lifudumala kancane kancane kusuka ku-20℃ kuya ku-35℃ bese liphola libuyele ku-20℃. Yonke inqubo yathatha amahora angu-8.
Epulatifomu yegranite yethuluzi lokulinganisa, kubekwa ama-wafer e-silicon ajwayelekile anembe kakhulu, futhi izinzwa zokufuduka ezinokunemba kwe-nanoscale zisetshenziselwa ukuqapha izinguquko zesimo esihlobene phakathi kwama-wafer e-silicon nepulatifomu ngesikhathi sangempela. Okwamanje, izinzwa eziningi zokushisa ezinembe kakhulu zihlelwe ezindaweni ezahlukene epulatifomu ukuqapha ukusatshalaliswa kwezinga lokushisa ebusweni bepulatifomu. Ngesikhathi sokuhlola, idatha yokufuduka kanye nedatha yokushisa kwaqoshwa njalo ngemizuzu eyi-15 ukuqinisekisa ukuphelela nokunemba kwedatha.
Idatha elinganisiwe kanye nokuhlaziywa kwemiphumela
Ubudlelwano phakathi kokushintsha kwezinga lokushisa kanye nokushintsha kosayizi wepulatifomu
Idatha yokuhlola ikhombisa ukuthi uma izinga lokushisa likhuphuka kusuka ku-20℃ kuya ku-35℃, ushintsho ngobukhulu obuqondile beplatifomu yegranite luncane kakhulu. Ngemva kokubala, kuyo yonke inqubo yokushisa, ukwanda okuphezulu komugqa weplatifomu kungama-nanometer angu-0.3 kuphela, okuphansi kakhulu kunobubanzi bokubekezelela amaphutha bokunemba kokulinganisa ezinqubweni zokukhiqiza ze-semiconductor. Ngesikhathi sesigaba sokupholisa, usayizi weplatifomu ungacishe ubuyele esimweni sokuqala, futhi isenzakalo sokulibala sokushintsha kosayizi singanakwa. Lesi sici sokugcina izinguquko ezincane kakhulu zobukhulu ngisho nangaphansi kokushintshashintsha okukhulu kokushisa kuqinisekisa ngokugcwele ukuzinza okuvelele kokushisa kweplatifomu yegranite.
Ukuhlaziywa kokufana kwezinga lokushisa ebusweni bepulatifomu
Idatha eqoqwe yinzwa yokushisa ikhombisa ukuthi ngesikhathi sokusebenza kwemishini kanye nenqubo yokushintsha kwezinga lokushisa, ukusatshalaliswa kwezinga lokushisa ebusweni bepulatifomu yegranite kuyafana kakhulu. Ngisho nasesigabeni lapho izinga lokushisa lishintsha kakhulu, umehluko wokushisa phakathi kwephuzu ngalinye lokulinganisa ebusweni bepulatifomu uhlala ulawulwa ngaphakathi kuka-±0.1℃. Ukusatshalaliswa kwezinga lokushisa elifanayo kugwema ngempumelelo ukuguquguquka kwepulatifomu okubangelwa ukucindezeleka kokushisa okungalingani, kuqinisekisa ukuthi indawo yokubhekisela yokulinganisa ithambile futhi izinzile, futhi kuhlinzeke ngendawo yokulinganisa ethembekile yemishini ye-semiconductor metrology.
Uma kuqhathaniswa namapulatifomu ezinto zendabuko
Idatha elinganisiwe yesikhulumi se-granite iqhathaniswa naleyo yemishini yokulinganisa ye-semiconductor yohlobo olufanayo esebenzisa ipulatifomu ye-aluminium alloy, futhi umehluko wawubalulekile. Ngaphansi kwezimo ezifanayo zokushintsha kwezinga lokushisa, ukwanda okuqondile kwesikhulumi se-aluminium alloy kuphakeme njengama-nanometer angu-2.5, okungaphezu kokuphindwe kasishiyagalombili kwesikhulumi se-granite. Okwamanje, ukusatshalaliswa kwezinga lokushisa ebusweni besikhulumi se-aluminium alloy akulingani, kanti umehluko omkhulu wokushisa ufinyelela ku-0.8℃, okuholela ekuguqukeni okusobala kwesikhulumi futhi kuthinte kakhulu ukunemba kokulinganisa.
Ezweni eliqondile lemishini ye-semiconductor metrology, amapulatifomu e-granite, ngokuqina kwawo kokushisa okuvelele, abe yinsika eyinhloko ekuqinisekiseni ukunemba kokulinganisa. Idatha elinganisiwe ifakazela kakhulu ukusebenza okuvelele kwepulatifomu ye-granite ekuphenduleni izinguquko zokushisa, ihlinzeka ngokusekelwa kobuchwepheshe okuthembekile embonini yokukhiqiza ye-semiconductor. Njengoba izinqubo zokukhiqiza ze-semiconductor ziqhubekela phambili ekuqondeni okuphezulu, inzuzo yokuqina kokushisa kwamapulatifomu e-granite izobonakala kakhulu, iqhubeke nokushayela ubuchwepheshe obusha kanye nentuthuko embonini.
Isikhathi sokuthunyelwe: Meyi-13-2025
