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Emkhakheni wokukhiqiza ama-semiconductor, ukunemba kuyindlela yokuphila yekhwalithi nokusebenza komkhiqizo. Imishini yemitha ye-semiconductor, njengesixhumanisi esibalulekile sokuqinisekisa ukunemba kokukhiqiza, ibeka izidingo eziqinile ekuzinzeni kwezingxenye zayo eziyinhloko. Phakathi kwazo, iplatifomu ye-granite, enokuqina kwayo okushisayo okuvelele, idlala indima ebaluleke kakhulu kumishini ye-semiconductor metering. Lesi sihloko sizokwenza ukuhlaziya okujulile kokusebenza kokuzinza okushisayo kwamaplathifomu e-granite kumshini wokulinganisa we-semiconductor ngokusebenzisa idatha yokuhlola yangempela. .
Izidingo eziqinile zokuzinza okushisayo kwemishini yokulinganisa ekukhiqizeni ama-semiconductor
Inqubo yokukhiqiza i-semiconductor iyinkimbinkimbi kakhulu futhi inembile, futhi ububanzi bemigqa yesifunda ku-chip bungene ezingeni le-nanometer. Kule nqubo yokukhiqiza enembayo ephezulu, ngisho nokushintsha kwezinga lokushisa okuncane kungabangela ukunwetshwa kokushisa kanye nokufinyela kwezingxenye zemishini, ngaleyo ndlela kubangele amaphutha okulinganisa. Isibonelo, enqubweni ye-photolithography, uma ukunemba kokulinganisa kwemishini yokulinganisa ichezuka nge-nanometer engu-1, kungase kubangele izinkinga ezinkulu njengamasekhethi amafushane noma amasekhethi avulekile kumasekhethi ku-chip, okuholela ekukhishweni kwe-chip. Ngokwezibalo zedatha yemboni, kukho konke ukuguquguquka okungu-1℃ kwezinga lokushisa, iplathifomu yempahla yensimbi yendabuko yokulinganisa ingase ibe nezinguquko ezinobukhulu zama-nanometer ambalwa. Kodwa-ke, ukukhiqizwa kwe-semiconductor kudinga ukunemba kokulinganisa ukuthi kulawulwe ngaphakathi kwama-nanometers angu-±0.1, okwenza ukuzinza kwe-thermal kube yisici esibalulekile ekunqumeni ukuthi impahla yokukala ingahlangabezana yini nezidingo zokukhiqiza i-semiconductor. .
Izinzuzo zethiyori zokuzinza okushisayo kwamapulatifomu egwadle
I-Granite, njengohlobo lwamatshe emvelo, ine-compact yangaphakathi yamaminerali crystallization, isakhiwo esiminyene nesifanayo, futhi sinenzuzo yemvelo yokuzinza okushisayo. Mayelana ne-coefficient yokunwetshwa kwe-thermal, i-coefficient yokunwetshwa okushisayo kwegwadle iphansi kakhulu, ngokuvamile isukela ku-4.5 ukuya ku-6.5×10⁻⁶/K. Ngokuphambene, i-coefficient yokunwetshwa okushisayo kwezinto ezivamile zensimbi ezifana nama-alloys e-aluminium iphezulu njengo-23.8×10⁻⁶/K, ephindwe izikhathi ezimbalwa kunegwadle. Lokhu kusho ukuthi ngaphansi kwezimo ezifanayo zokuhlukahluka kwezinga lokushisa, ukuguqulwa kobukhulu beplathifomu yegwadle kuncane kakhulu kunaleyo yesikhulumi sensimbi, esinganikeza ireferensi yokulinganisa ezinzile yemishini yemitha ye-semiconductor. .
Ngaphezu kwalokho, isakhiwo sekristalu se-granite sisinika ukufana okuhle kakhulu kokushisa kokushisa. Lapho ukusebenza kwemishini kukhiqiza ukushisa noma ukushintsha kwezinga lokushisa elizungezile, iplathifomu yegwadle ingasusa ukushisa ngokushesha nangokulinganayo, igweme ukushisisa okweqile kwasendaweni noma izenzakalo ezibanda kakhulu, ngaleyo ndlela igcine ngokuphumelelayo ukufana kukonke kwezinga lokushisa kweplathifomu futhi iqhubeke nokuqinisekisa ukuzinza kokunemba kokulinganisa. .
Inqubo kanye nendlela yokulinganisa ukuzinza okushisayo
Ukuze sihlaziye ngokunembile ukuzinza kokushisa kweplathifomu yegwadle kumshini wokubala we-semiconductor, siklame isikimu sokulinganisa esiqinile. Khetha ithuluzi lokulinganisa i-wafer ye-semiconductor enembayo ephezulu, efakwe inkundla yegwadle ecutshungulwe ngokunemba kakhulu. Endaweni yokuhlola, izinga lokushisa elivamile elihlukahluka endaweni yokusebenzela yokukhiqiza i-semiconductor lalingiswa, okungukuthi, ukufudumeza kancane kancane kusuka ku-20℃ kuya ku-35℃ bese kuphola kubuyele ku-20℃. Lonke lolu hlelo lwathatha amahora angu-8. .
Kuplathifomu yegwadle yensimbi yokulinganisa, amawafa e-silicon ajwayelekile anembe kakhulu abekwa, futhi izinzwa zokususwa ezinombolo we-nanoscale zisetshenziselwa ukuqapha izinguquko zokuma okuhlobene phakathi kwamawafa e-silicon kanye nenkundla ngesikhathi sangempela. Ngaleso sikhathi, izinzwa eziningi zokushisa ezinemba okuphezulu zihlelwa ezindaweni ezihlukene endaweni yesikhulumi ukuze kuqashwe ukusatshalaliswa kwezinga lokushisa endaweni yesikhulumi. Ngesikhathi sokuhlolwa, idatha yokususwa kanye nedatha yezinga lokushisa kwarekhodwa njalo ngemizuzu eyi-15 ukuze kuqinisekiswe ukuphelela nokunemba kwedatha. .
Idatha elinganisiwe nokuhlaziywa kwemiphumela
Ubudlelwano phakathi kokushintsha kwezinga lokushisa nokushintsha kosayizi wenkundla
Idatha yokuhlola ibonisa ukuthi uma izinga lokushisa likhuphuka ukusuka ku-20℃ ukuya ku-35℃, ushintsho kusayizi womugqa weplathifomu yegwadle luncane kakhulu. Ngemuva kokubala, kuyo yonke inqubo yokushisisa, ukunwetshwa komugqa okuphezulu kweplatifomu kungama-nanometer angu-0.3 kuphela, okuphansi kakhulu kunobubanzi bokubekezelela amaphutha ngokunemba kokulinganisa ezinqubweni zokukhiqiza ze-semiconductor. Phakathi nesigaba sokupholisa, usayizi weplathifomu ungacishe ubuyele ngokuphelele esimweni sokuqala, futhi isimo sokusalela sokushintshwa kosayizi singashaywa indiva. Lesi sici sokugcina izinguquko ezinobukhulu obuphansi kakhulu ngisho nangaphansi kokuguquguquka okukhulu kwezinga lokushisa liqinisekisa ngokugcwele ukuzinza okushisayo okuvelele kweplathifomu yegwadle. .
Ukuhlaziywa kokufana kwezinga lokushisa endaweni yesikhulumi
Idatha eqoqwe inzwa yokushisa ibonisa ukuthi ngesikhathi sokusebenza kwemishini kanye nenqubo yokuguquka kwezinga lokushisa, ukusatshalaliswa kwezinga lokushisa endaweni yesikhulumi se-granite kufana kakhulu. Ngisho naphakathi kwesiteji lapho izinga lokushisa lishintsha kakhulu, umehluko wezinga lokushisa phakathi kwephoyinti ngalinye lokulinganisa endaweni yesikhulumi uhlala ulawulwa ngaphakathi kokuthi ±0.1℃. Ukusatshalaliswa kwezinga lokushisa okulinganayo kugwema ngempumelelo ukuguqulwa kwenkundla okubangelwa ukucindezelwa kokushisa okungalingani, kuqinisekisa ukucaba nokuzinza kwendawo yereferensi yokulinganisa, nokuhlinzeka ngendawo yokulinganisa enokwethenjelwa yezinto zokusebenza ze-semiconductor metrology. .
Uma kuqhathaniswa namapulatifomu ezinto zendabuko
Idatha elinganisiwe yeplathifomu yegwadle iqhathaniswe naleyo yemishini yokukala ye-semiconductor yohlobo olufanayo kusetshenziswa iplathifomu yengxube ye-aluminium, futhi umehluko wawubalulekile. Ngaphansi kwezimo ezifanayo zokushintsha izinga lokushisa, ukunwetshwa okuqondile kweplathifomu ye-aluminium alloy kuphezulu ngama-nanometer angu-2.5, okungaphezu kokuphindwe kasishiyagalombili kuneplathifomu yegwadle. Khonamanjalo, ukusabalalisa kwezinga lokushisa endaweni yesikhulumi se-aluminium alloy akulingani, umehluko omkhulu wokushisa ufinyelela ku-0.8℃, okuholela ekuguquguqukeni okusobala kweplathifomu futhi kuthinte kakhulu ukunemba kokulinganisa. .
Emhlabeni onembile wemishini ye-semiconductor metrology, amapulatifomu egwadle, anokuqina kwawo okushisayo okuvelele, abe insika ekuqinisekiseni ukunemba kokulinganisa. Idatha elinganisiwe ifakazela ngokuqinile ukusebenza okuvelele kweplathifomu yegwadle ekuphenduleni izinguquko zezinga lokushisa, ihlinzeka ngosekelo oluthembekile lwezobuchwepheshe lwemboni yokukhiqiza i-semiconductor. Njengoba izinqubo zokukhiqiza i-semiconductor ziqhubekela phambili ekunembeni okuphezulu, inzuzo yokuqina kokushisa kwezinkundla zegwadle izogqama kakhulu, iqhubekisele phambili ukusungula nokuthuthuka kwezobuchwepheshe embonini.
Isikhathi sokuthumela: May-13-2025