Umthelela othize we-coefficient yokunwetshwa kwe-thermal ekukhiqizeni i-semiconductor.

.
Emkhakheni wokukhiqiza i-semiconductor, ephishekela ukunemba okuphelele, i-coefficient yokwanda kwe-thermal ingenye yemingcele eyinhloko ethinta ikhwalithi yomkhiqizo nokuzinza kokukhiqiza. Kuyo yonke inqubo kusukela ku-photolithography, ukuhlanganisa kuya ekupakishweni, umehluko kuma-coefficients wokunweba okushisayo wezinto zokwakha ungaphazamisa ukunemba kokukhiqiza ngezindlela ezahlukahlukene. Kodwa-ke, isisekelo se-granite, ne-coefficient yaso yokwandisa ukushisa okuphansi kwe-ultra-low, sesiyisihluthulelo sokuxazulula le nkinga. .
Inqubo ye-Lithography: Ukuguqulwa kwe-thermal kubangela ukuchezuka kwephethini
I-Photolithography iyisinyathelo esibalulekile ekukhiqizeni ama-semiconductor. Ngomshini we-photolithography, amaphethini wesifunda kumaski adluliselwa ebusweni be-wafer ehlanganiswe ne-photoresist. Phakathi nale nqubo, ukuphathwa okushisayo ngaphakathi komshini we-photolithography kanye nokuzinza kwe-worktable kubaluleke kakhulu. Thatha izinto zensimbi zendabuko njengesibonelo. I-coefficient yabo yokwandisa ukushisa cishe i-12×10⁻⁶/℃. Ngesikhathi sokusebenza komshini we-photolithography, ukushisa okukhiqizwa umthombo wokukhanya we-laser, amalensi okubonayo kanye nezingxenye zemishini kuzobangela izinga lokushisa lemishini ukuthi likhuphuke ngo-5-10 ℃. Uma ithebula lokusebenzela lomshini we-lithography lisebenzisa isisekelo sensimbi, isisekelo esingamamitha angu-1 ubude singabangela ukuguqulwa kokunwetshwa okungu-60-120 μm, okuzoholela ekushintsheni endaweni ehlobene phakathi kwemaski newafa. .
Ezinqubweni ezithuthukisiwe zokukhiqiza (ezifana ne-3nm ne-2nm), isikhala se-transistor singama-nanometer ambalwa kuphela. Ukushintshashintsha kwe-thermal okunjalo kwanele ukuze kubangele iphethini ye-photolithography ukuthi ingaqondani kahle, okuholela ekuxhumekeni okungavamile kwama-transistor, amasekhethi amafushane noma amasekhethi avuliwe, nezinye izinkinga, okuholela ngokuqondile ekungasebenzini kwe-chip. I-thermal expansion coefficient yesisekelo segwadle iphansi njengo-0.01μm/°C (okungukuthi, (1-2) ×10⁻⁶/℃), futhi ukonakala ngaphansi kokushintsha kwezinga lokushisa okufanayo kungu-1/10-1/5 kuphela waleyo yensimbi. Inganikeza inkundla ethwala imithwalo ezinzile yomshini we-photolithography, iqinisekise ukudluliswa okunembile kwephethini ye-photolithography futhi ithuthukise kakhulu isivuno sokwenziwa kwe-chip. .

I-Etching and deposition: Kuthinta ukunemba kwe-dimensional kwesakhiwo
I-Etching kanye ne-deposition yizinqubo ezibalulekile zokwakha izinhlaka zesekethe ezinezinhlangothi ezintathu endaweni eyiwafer. Ngesikhathi senqubo yokuhlanganisa, igesi esebenzayo ibhekana nokusabela kwamakhemikhali ngento engaphezulu ye-wafer. Ngaleso sikhathi, izakhi ezifana nokunikezwa kwamandla e-RF kanye nokulawula ukugeleza kwegesi ngaphakathi kwezinto zokusebenza kukhiqiza ukushisa, okubangela izinga lokushisa le-wafer kanye nezingxenye zempahla ukuthi zikhuphuke. Uma i-coefficient yokunwetshwa okushisayo kwesiphathi se-wafer noma isisekelo sezinto zokusebenza singafani naleyo ye-wafer (i-coefficient yokunwetshwa okushisayo kwento ye-silicon cishe icishe ibe ngu-2.6×10⁻⁶/℃), ukucindezelwa kokushisa kuzokwenziwa lapho izinga lokushisa lishintsha, elingabangela ukuqhekeka okuncane noma ukungqubuzana ebusweni bewafa. .
Lolu hlobo lwe-deformation luzothinta ukujula kokucwilisa kanye nokuma kodonga oluseceleni, okubangele ukuthi ubukhulu bemigodi eqoshiwe, ngokusebenzisa izimbobo nezinye izakhiwo ukuba buphambuke ezidingweni zokuklama. Ngokufanayo, enqubweni yokubeka ifilimu encane, umehluko ekwandiseni okushisayo kungase kubangele ukucindezeleka kwangaphakathi kufilimu encane efakwe, okuholela ezinkingeni ezifana nokuqhekeka nokukhishwa kwefilimu, okuthinta ukusebenza kukagesi nokuthembeka kwesikhathi eside kwe-chip. Ukusetshenziswa kwezisekelo ze-granite ezine-coefficient yokwandisa ukushisa okushisayo okufana nalokhu kwezinto ze-silicon kunganciphisa ngempumelelo ukucindezeleka okushisayo futhi kuqinisekise ukuzinza nokunemba kwezinqubo zokufaka nokubeka. .
Isigaba sokupakisha: Ukungafani kwe-thermal kubangela izinkinga zokuthembeka
Esigabeni sokupakisha se-semiconductor, ukuhambisana kwama-coefficients okunweba okushisayo phakathi kwe-chip nezinto zokupakisha (njenge-epoxy resin, izitsha zobumba, njll.) kubaluleke kakhulu. I-coefficient yokwandisa okushisayo ye-silicon, into ewumgogodla wama-chips, iphansi kakhulu, kanti leyo yezinto eziningi zokupakisha iphakeme kakhulu. Uma izinga lokushisa le-chip lishintsha ngesikhathi sokusetshenziswa, ukucindezeleka okushisayo kuzokwenzeka phakathi kwe-chip nezinto zokupakisha ngenxa yokungafani kwama-coefficients okunweba okushisayo. .
Lokhu kucindezeleka okushisayo, ngaphansi komphumela wemijikelezo yokushisa ephindaphindiwe (njengokushisa nokupholisa ngesikhathi sokusebenza kwe-chip), kungaholela ekuqhekekeni kokukhathala kwamajoyinti e-solder phakathi kwe-chip ne-substrate yokupakisha, noma kubangele ukuba izintambo ezibophezelayo endaweni ye-chip ziwe, ekugcineni kubangele ukwehluleka kokuxhumeka kukagesi kwe-chip. Ngokukhetha izinto zokupakisha ze-substrate ene-coefficient yokwandisa okushisayo esondelene naleyo yezinto ze-silicon nokusebenzisa amapulatifomu okuhlola i-granite anokuqina okuhle kakhulu kokushisa ukuze kutholakale ukunemba phakathi nenqubo yokupakisha, inkinga yokungahambisani nokushisa ingancishiswa ngempumelelo, ukuthembeka kokupakisha kungathuthukiswa, futhi impilo yesevisi ye-chip inganwetshwa. .
Ukulawulwa kwemvelo yokukhiqiza: Ukuzinza okudidiyelwe kwezinto zokusebenza nezakhiwo zasefekthri
Ngaphezu kokuthinta ngokuqondile inqubo yokukhiqiza, i-coefficient yokwanda kwe-thermal nayo ihlobene nokulawulwa kwemvelo okuphelele kwezimboni ze-semiconductor. Ezingqungqutheleni ezinkulu zokukhiqiza ama-semiconductor, izici ezifana nokuqala nokumiswa kwezinhlelo zokupholisa umoya kanye nokuhlakazwa kokushisa kwamaqoqo emishini kungabangela ukushintshashintsha kwezinga lokushisa kwemvelo. Uma i-coefficient yokunwetshwa okushisayo kwesitezi sefekthri, izisekelo zemishini kanye nezinye izingqalasizinda ziphezulu kakhulu, ukuguquka kwezinga lokushisa kwesikhathi eside kuzobangela ukuthi iphansi liqhekeke futhi isisekelo semishini sigudluke, ngaleyo ndlela kuthinte ukunemba kwemishini enembayo njengemishini ye-photolithography nemishini yokunamathisela. .
Ngokusebenzisa izisekelo ze-granite njengoba imishini isekela futhi ihlanganise nezinto zokwakha zefekthri ezinama-coefficients aphansi okwandisa ukushisa, kungadalwa indawo yokukhiqiza ezinzile, ukunciphisa imvamisa yokulinganisa imishini kanye nezindleko zokunakekelwa okubangelwa ukuguqulwa kokushisa kwemvelo, nokuqinisekisa ukusebenza okuzinzile kwesikhathi eside komugqa wokukhiqiza we-semiconductor. .
I-coefficient yokunwetshwa kwe-thermal ihamba kuwo wonke umjikelezo wempilo wokukhiqizwa kwe-semiconductor, kusukela ekukhethweni kwezinto ezibonakalayo, ukulawulwa kwenqubo kuya ekupakishweni nasekuhlolweni. Umthelela wokunwetshwa kwe-thermal udinga ukucatshangelwa ngokuqinile kuso sonke isixhumanisi. Izisekelo ze-granite, ezine-coefficient yazo ephansi kakhulu yokunwetshwa okushisayo nezinye izici ezinhle kakhulu, zihlinzeka ngesisekelo esizinzile sokwenziwa kwe-semiconductor futhi zibe isiqinisekiso esibalulekile sokuphromotha ukuthuthukiswa kwezinqubo zokukhiqiza ama-chip ekunembeni okuphezulu.