Emkhakheni wokukhiqiza we-semiconductor, ophishekela ukunemba okuphelele, i-coefficient of thermal expansion ingenye yemingcele eyinhloko ethinta ikhwalithi yomkhiqizo kanye nokuqina kokukhiqiza. Kuyo yonke inqubo kusukela ku-photolithography, ukuqopha kuya ekupakisheni, umehluko kuma-coefficients of thermal expansion wezinto zokwakha ungaphazamisa ukunemba kokukhiqiza ngezindlela ezahlukahlukene. Kodwa-ke, isisekelo se-granite, esine-coefficient yaso yokwanda kokushisa ephansi kakhulu, sesibe yisihluthulelo sokuxazulula le nkinga.
Inqubo ye-Lithography: Ukuguquguquka kokushisa kubangela ukuphambuka kwephethini
I-Photolithography iyisinyathelo esiyinhloko ekukhiqizweni kwe-semiconductor. Ngomshini we-photolithography, amaphethini wesekethe kumaski adluliselwa ebusweni be-wafer embozwe nge-photoresist. Phakathi nale nqubo, ukuphathwa kokushisa ngaphakathi komshini we-photolithography kanye nokuqina kwetafula lokusebenza kubaluleke kakhulu. Thatha izinto zensimbi zendabuko njengesibonelo. I-coefficient yazo yokwanda kokushisa cishe ingu-12×10⁻⁶/℃. Ngesikhathi sokusebenza komshini we-photolithography, ukushisa okukhiqizwa umthombo wokukhanya we-laser, amalensi okukhanya kanye nezingxenye zemishini kuzokwenza ukuthi izinga lokushisa lemishini likhuphuke ngo-5-10 ℃. Uma itafula lokusebenza lomshini we-lithography lisebenzisa isisekelo sensimbi, isisekelo esingamamitha angu-1 ubude singadala ukuguquguquka kokukhula okungu-60-120 μm, okuzoholela ekushintsheni kwesikhundla esihlobene phakathi kwemaski ne-wafer.
Ezinqubweni zokukhiqiza ezithuthukisiwe (njenge-3nm ne-2nm), isikhala se-transistor singama-nanometer ambalwa kuphela. Ukuguquguquka okuncane okunjalo kokushisa kwanele ukubangela ukuthi iphethini ye-photolithography ingalingani kahle, okuholela ekuxhumaneni okungavamile kwe-transistor, amasekethe amafushane noma amasekethe avulekile, kanye nezinye izinkinga, okuholela ngqo ekwehlulekeni kwemisebenzi ye-chip. I-coefficient yokwandisa ukushisa yesisekelo se-granite iphansi njengo-0.01μm/°C (okungukuthi, (1-2) ×10⁻⁶/℃), kanti ukuguqulwa ngaphansi kokushintsha kokushisa okufanayo kungu-1/10-1/5 kuphela kwensimbi. Kunganikeza ipulatifomu ezinzile ethwala umthwalo yomshini we-photolithography, ukuqinisekisa ukudluliselwa okunembile kwephethini ye-photolithography futhi kuthuthukise kakhulu isivuno sokukhiqizwa kwe-chip.
Ukuqopha nokubeka: Kuthinta ukunemba kobukhulu besakhiwo
Ukugcaba nokubeka kuyizinqubo ezibalulekile zokwakha izakhiwo zesekethe ezinezinhlangothi ezintathu ebusweni be-wafer. Ngesikhathi senqubo yokugcaba, igesi esabelayo ibhekana nokusabela kwamakhemikhali nezinto ezingaphandle kwe-wafer. Okwamanje, izingxenye ezifana nokunikezwa kwamandla kwe-RF kanye nokulawula ukugeleza kwegesi ngaphakathi kwemishini kukhiqiza ukushisa, okubangela ukuthi izinga lokushisa le-wafer kanye nezingxenye zemishini likhuphuke. Uma i-coefficient yokwanda kokushisa kwe-wafer carrier noma isisekelo semishini ingalingani ne-wafer (i-coefficient yokwanda kokushisa kwezinto ze-silicon cishe ingu-2.6×10⁻⁶/℃), ukucindezeleka kokushisa kuzovela lapho izinga lokushisa lishintsha, okungase kubangele imifantu emincane noma ukugoba ebusweni be-wafer.
Lolu hlobo lokuguquguquka luzothinta ukujula kokugcaba kanye nokuma kodonga oluseceleni, okubangela ukuthi ubukhulu bemisele egcaba, ngokusebenzisa izimbobo nezinye izakhiwo ziphambuke ezidingweni zomklamo. Ngokufanayo, enkambisweni yokugcaba ifilimu encane, umehluko ekukhuleni kokushisa ungabangela ukucindezeleka kwangaphakathi kwifilimu encane ebekwe, okuholela ezinkingeni ezifana nokuqhekeka nokuqhekeka kwefilimu, okuthinta ukusebenza kukagesi kanye nokuthembeka kwesikhathi eside kwe-chip. Ukusetshenziswa kwezisekelo ze-granite ezine-coefficient yokwandisa ukushisa efana neyezinto ze-silicon kunganciphisa ngempumelelo ukucindezeleka kokushisa futhi kuqinisekise ukuzinza nokunemba kwezinqubo zokugcaba nokubeka.
Isigaba sokupakishwa: Ukungafani kokushisa kubangela izinkinga zokuthembeka
Esigabeni sokupakisha se-semiconductor, ukuhambisana kwama-coefficients okwandisa ukushisa phakathi kwe-chip nezinto zokupakisha (njenge-epoxy resin, i-ceramics, njll.) kubaluleke kakhulu. I-coefficient yokwandisa ukushisa ye-silicon, izinto eziyinhloko zama-chips, iphansi kakhulu, kanti eyezinto eziningi zokupakisha iphakeme kakhulu. Lapho izinga lokushisa le-chip lishintsha ngesikhathi sokusetshenziswa, kuzokwenzeka ukucindezeleka kokushisa phakathi kwe-chip nezinto zokupakisha ngenxa yokungafani kwama-coefficients okukhulisa ukushisa.
Lokhu kucindezeleka kokushisa, ngaphansi komphumela wemijikelezo yokushisa ephindaphindwayo (njengokushisa nokupholisa ngesikhathi sokusebenza kwe-chip), kungaholela ekuqhekekeni kokukhathala kwamajoyinti e-solder phakathi kwe-chip kanye ne-substrate yokupakisha, noma kubangele ukuthi izintambo zokubopha ebusweni be-chip ziwe, ekugcineni kuholele ekuhlulekeni kokuxhumeka kukagesi kwe-chip. Ngokukhetha izinto zokufaka i-substrate ezine-coefficient yokwandisa ukushisa eseduze naleyo yezinto ze-silicon nokusebenzisa amapulatifomu okuhlola i-granite anokuqina okuhle kokushisa ukuze kutholakale ukunemba ngesikhathi senqubo yokupakisha, inkinga yokungafani kokushisa ingancishiswa ngempumelelo, ukuthembeka kokupakisha kungathuthukiswa, futhi impilo yenkonzo ye-chip ingandiswa.
Ukulawulwa kwendawo yokukhiqiza: Ukuqina okuhlelekile kwezakhiwo zemishini nezimboni
Ngaphezu kokuthinta ngqo inqubo yokukhiqiza, i-coefficient yokwanda kokushisa ihlobene nokulawulwa kwemvelo okuphelele kwamafektri e-semiconductor. Ema-workshop amakhulu okukhiqiza ama-semiconductor, izici ezifana nokuqala nokuma kwezinhlelo zokupholisa umoya kanye nokushabalaliswa kokushisa kwamaqoqo emishini kungabangela ukuguquguquka kokushisa kwemvelo. Uma i-coefficient yokwanda kokushisa kwephansi lefektri, izisekelo zemishini kanye nezinye ingqalasizinda iphakeme kakhulu, izinguquko zokushisa zesikhathi eside zizokwenza ukuthi phansi kuqhekeke futhi isisekelo semishini sishintshe, ngaleyo ndlela kuthinte ukunemba kwemishini yokunemba njengemishini ye-photolithography kanye nemishini yokuqopha.
Ngokusebenzisa izisekelo zegranite njengezinsiza zemishini nokuzihlanganisa nezinto zokwakha zasefektri ezine-coefficients yokwandisa ukushisa okuphansi, kungadalwa indawo yokukhiqiza ezinzile, kuncishiswe imvamisa yokulinganiswa kwemishini kanye nezindleko zokugcinwa okubangelwa ukuguqulwa kokushisa kwemvelo, futhi kuqinisekiswe ukusebenza okuzinzile kwesikhathi eside komugqa wokukhiqiza we-semiconductor.
I-coefficient yokwanda kokushisa idlula kulo lonke umjikelezo wokuphila wokukhiqiza ama-semiconductor, kusukela ekukhetheni izinto, ukulawula inqubo kuya ekupakisheni nasekuhloleni. Umthelela wokwanda kokushisa udinga ukucatshangelwa ngokuqinile kuzo zonke izixhumanisi. Izisekelo ze-granite, ezine-coefficient yazo ephansi kakhulu yokwanda kokushisa kanye nezinye izakhiwo ezinhle kakhulu, zinikeza isisekelo esiqinile somzimba sokukhiqiza ama-semiconductor futhi ziba isiqinisekiso esibalulekile sokukhuthaza ukuthuthukiswa kwezinqubo zokukhiqiza ama-chip ukuze kube nokunemba okuphezulu.
Isikhathi sokuthunyelwe: Meyi-20-2025