♦Alumina(Al2O3)
Izingxenye ze-ceramic ezinembayo ezikhiqizwe i-ZhongHui Intelligent Manufacturing Group(ZHHIMG) zingenziwa ngezinto ezingavuthiwe ze-ceramic ezihlanzekile kakhulu, i-92~97% i-alumina, i-99.5% ye-alumina, > i-99.9% ye-alumina, kanye nokucindezela okubandayo kwe-isostatic kwe-CIP.Ukushisa okuphezulu kwe-sintering kanye nokwenza imishini enembayo, ukunemba kwe-dimensional okungu-± 0.001mm, ukushelela kufika ku-Ra0.1, sebenzisa izinga lokushisa elifika ku-1600 degrees.Imibala ehlukene ye-ceramics ingenziwa ngokuvumelana nezidingo zamakhasimende, njengalezi: ezimnyama, ezimhlophe, ezi-beige, ezibomvu ezimnyama, njll. Izingxenye ze-ceramic ezinembile ezikhiqizwa inkampani yethu zimelana nokushisa okuphezulu, ukugqwala, ukuguga nokufakwa kwe-insulation, futhi kungaba esetshenziswa isikhathi eside endaweni yokushisa ephezulu, i-vacuum negesi egqwalayo.
Isetshenziswa kakhulu kumishini ehlukahlukene yokukhiqiza i-semiconductor: Amafreyimu (ubakaki beceramic), I-Substrate (isisekelo), Ingalo/Ibhuloho(i-manipulator), , Izingxenye Zemishini kanye Ne-Ceramic Air Bearing.
| Igama Lomkhiqizo | Ukuhlanzeka Okuphezulu 99 I-Alumina Ceramic Square Tube / Ipayipi / Induku | |||||
| Inkomba | Iyunithi | 85 % Al2O3 | 95 % Al2O3 | 99 % Al2O3 | 99.5 % Al2O3 | |
| Ukuminyana | g/cm3 | 3.3 | 3.65 | 3.8 | 3.9 | |
| Ukumuncwa Amanzi | % | <0.1 | <0.1 | 0 | 0 | |
| I-Sintered Temperature | ℃ | 1620 | 1650 | 1800 | 1800 | |
| Ukuqina | Mohs | 7 | 9 | 9 | 9 | |
| Amandla Okugoba(20℃)) | Mpa | 200 | 300 | 340 | 360 | |
| Amandla Acindezelayo | Kgf/cm2 | 10000 | 25000 | 30000 | 30000 | |
| Isikhathi Eside Sezinga lokushisa Lokusebenza | ℃ | 1350 | 1400 | 1600 | 1650 | |
| Ubukhulu.Izinga Lokushisa Lokusebenza | ℃ | 1450 | 1600 | 1800 | 1800 | |
| Ukumelana Nomthamo | 20℃ | Ω.cm3 | >1013 | >1013 | >1013 | >1013 |
| 100 ℃ | 1012-1013 | 1012-1013 | 1012-1013 | 1012-1013 | ||
| 300 ℃ | >109 | >1010 | >1012 | >1012 | ||
Ukusetshenziswa kwe-alumina ceramics yokuhlanzeka okuphezulu:
1. Kufakwe kumishini ye-semiconductor: i-ceramic vacuum chuck, i-cutting disc, i-disc yokuhlanza, i-CHUCK ye-ceramic.
2. Izingxenye zokudluliswa kwe-wafer: ama-chucks okuphatha i-wafer, ama-discs okusika ama-wafer, ama-disc wokuhlanza ama-wafer, izinkomishi zokuhlola zokuhlola i-wafer optical.
3. LED / LCD flat panel display industry: ceramic nozzle, ceramic grinding disc, LIFT PIN, PIN rail.
4. Ukuxhumana okubonakalayo, imboni yelanga: amashubhu e-ceramic, izinduku ze-ceramic, ibhodi lesifunda lokunyathelisa isikrini se-ceramic scrapers.
5. Izingxenye ezikwazi ukumelana nokushisa nezivimbela ugesi: ama-ceramic bearings.
Njengamanje, ama-ceramics e-aluminium oxide angahlukaniswa abe ubumsulwa obuphezulu kanye ne-ceramics evamile.Uchungechunge oluphezulu lwe-aluminium oxide ceramics oluhlanzekile lubhekisela ezintweni ze-ceramic eziqukethe ngaphezu kuka-99.9% Al₂O₃.Ngenxa yokushisa kwayo okushisayo okufika ku-1650 - 1990°C kanye nobude bayo bokudluliswa kwegagasi obungu-1 ~ 6μm, ivamise ukucutshungulwa ibe ingilazi ehlanganisiwe esikhundleni se-platinum crucible: engasetshenziswa njengeshubhu le-sodium ngenxa yokudlulisa ukukhanya nokumelana nokugqwala. insimbi ye-alkali.Embonini ye-elekthronikhi, ingasetshenziswa njengezinto zokuvikela imvamisa ephezulu zama-IC substrates.Ngokusho kokuqukethwe okuhlukile kwe-aluminium oxide, uchungechunge olujwayelekile lwe-aluminium oxide ceramic lungahlukaniswa ngama-ceramics angama-99, ama-ceramics angama-95, ama-ceramics angama-90 nama-ceramics angama-85.Kwesinye isikhathi, izitsha zobumba ezinama-80% noma 75% we-aluminium oxide nazo zihlukaniswa njengochungechunge olujwayelekile lwe-aluminium oxide ceramic.Phakathi kwazo, i-99 aluminium oxide ceramic material isetshenziselwa ukukhiqiza i-crucible high-temperature, ithubhu yesithando somlilo kanye nezinto ezikhethekile ezivimbela ukugqokwa, njengama-ceramic bearings, seals se-ceramic namapuleti e-valve.I-95 aluminium ceramics isetshenziswa kakhulu njengengxenye ekwazi ukumelana nokugqwala.I-ceramics engu-85 ivame ukuxutshwa kwezinye izakhiwo, ngaleyo ndlela ithuthukise ukusebenza kukagesi namandla emishini.Ingasebenzisa i-molybdenum, i-niobium, i-tantalum nezinye izigxivizo zensimbi, kanti ezinye zisetshenziswa njengamadivaysi kagesi e-vacuum.
| Into Yekhwalithi (Inani Lommeli) | Igama Lomkhiqizo | I-AES-12 | I-AES-11 | I-AES-11C | I-AES-11F | I-AES-22S | AES-23 | AL-31-03 | |
| Ukwakhiwa Kwamakhemikhali Umkhiqizo Ophansi We-Sodium Easy Sintering | H₂O | % | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 |
| LOl | % | 0.1 | 0.2 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | |
| Fe₂0₃ | % | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | |
| SiO₂ | % | 0.03 | 0.03 | 0.03 | 0.03 | 0.02 | 0.04 | 0.04 | |
| Na₂O | % | 0.04 | 0.04 | 0.04 | 0.04 | 0.02 | 0.04 | 0.03 | |
| MgO* | % | - | 0.11 | 0.05 | 0.05 | - | - | - | |
| Al₂0₃ | % | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | |
| I-Medium Particle Diameter (MT-3300, indlela yokuhlaziya i-laser) | μm | 0.44 | 0.43 | 0.39 | 0.47 | 1.1 | 2.2 | 3 | |
| α Crystal Usayizi | μm | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 ~ 1.0 | 0.3 ~ 4 | 0.3 ~ 4 | |
| Ukwakha Ukuminyana** | g/cm³ | 2.22 | 2.22 | 2.2 | 2.17 | 2.35 | 2.57 | 2.56 | |
| I-Sintering Density** | g/cm³ | 3.88 | 3.93 | 3.94 | 3.93 | 3.88 | 3.77 | 3.22 | |
| Ukuncipha kwezinga lomugqa we-Sintering** | % | 17 | 17 | 18 | 18 | 15 | 12 | 7 | |
* I-MgO ayifakiwe ekubalweni kokuhlanzeka kwe-Al₂O₃.
* Ayikho impushana yokukala engu-29.4MPa (300kg/cm²), izinga lokushisa le-sintering lingu-1600°C.
I-AES-11 / 11C / 11F: Engeza u-0.05 ~ 0.1% MgO, i-sinterability yinhle kakhulu, ngakho iyasebenza ku-aluminium oxide ceramics ngobumsulwa obungaphezu kuka-99%.
I-AES-22S: Iphawuleka ngokuminyana okuphezulu kokwakheka kanye nezinga elinciphayo eliphansi lolayini we-sintering, iyasebenza ekubunjweni kwefomu lokushelela kanye neminye imikhiqizo yezinga elikhulu ngokunemba kobukhulu obudingekayo.
I-AES-23 / AES-31-03: Inokwakheka okuphezulu kwabantu, i-thixotropy kanye ne-viscosity ephansi kune-AES-22S.eyokuqala isetshenziselwa izitsha zobumba kuyilapho yokugcina isetshenziswa njengesinciphisi samanzi sezinto zokuvikela umlilo, ithola ukuthandwa.
♦ I-Silicon Carbide (SiC) Izimpawu
| Izimpawu Ezijwayelekile | Ukuhlanzeka kwezingxenye eziyinhloko (wt%) | 97 | |
| Umbala | Mnyama | ||
| Ukuminyana (g/cm³) | 3.1 | ||
| Ukumuncwa kwamanzi (%) | 0 | ||
| Izimpawu Zemishini | Amandla e-Flexural (MPa) | 400 | |
| I-modulus encane (GPa) | 400 | ||
| Ukuqina kwe-Vickers (GPA) | 20 | ||
| Izici Zokushisa | Izinga lokushisa eliphezulu lokusebenza (°C) | 1600 | |
| I-coefficient yokwandisa ukushisa | RT~500°C | 3.9 | |
| (1/°C x 10-6) | RT~800°C | 4.3 | |
| I-Thermal conductivity (W/m x K) | 130 110 | ||
| Ukumelana nokushaqeka okushisayo ΔT (°C) | 300 | ||
| Izici zikagesi | Ukumelana nevolumu | 25°C | 3 x106 |
| 300°C | - | ||
| 500°C | - | ||
| 800°C | - | ||
| I-Dielectric njalo | 10GHz | - | |
| Ukulahleka kwe-Dielectric (x 10-4) | - | ||
| I-Q Factor (x 104) | - | ||
| I-Dielectric breakdown voltage (KV/mm) | - | ||
♦ I-Silicon Nitride Ceramic
| Okubalulekile | Iyunithi | Si₃N₄ |
| Indlela yeSintering | - | I-Gas Pressure Sintered |
| Ukuminyana | g/cm³ | 3.22 |
| Umbala | - | Okumpunga Okumnyama |
| Izinga Lokumunca Amanzi | % | 0 |
| I-Modulus Encane | I-Gpa | 290 |
| Vickers Ukuqina | I-Gpa | 18-20 |
| Amandla Acindezelayo | Mpa | 2200 |
| Ukugoba Amandla | Mpa | 650 |
| I-Thermal Conductivity | W/mK | 25 |
| I-Thermal Shock Resistance | Δ (°C) | 450 - 650 |
| Ubukhulu Bezinga Lokushisa Lokusebenza | °C | 1200 |
| Ukumelana Nomthamo | Ω·cm | > 10 ^ 14 |
| I-Dielectric Constant | - | 8.2 |
| Amandla e-Dielectric | kV/mm | 16 |